Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation Medina Bailón, Cristina Carrillo-Nunez, Hamilton Lee, Jaehyun Sampedro Matarín, Carlos Padilla De la Torre, José Luis Donetti, Luca Georgiev, Vihar Gámiz Pérez, Francisco Jesús Asenov, Asen Direct source-to-drain tunneling Transport effective mass Confinement effective mass Multi-subband ensemble Monte Carlo Non-equilibrium Green’s function DGSOI FinFET As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators. In this work, we present the quantum enhancement of a 2D Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator, which includes a novel module for the direct Source-to-Drain tunneling (S/D tunneling), and its verification in the simulation of Double-Gate Silicon-On-Insulator (DGSOI) transistors and FinFETs. Compared to ballistic Non-Equilibrium Green’s Function (NEGF) simulations, our results show accurate I D vs. V GS and subthreshold characteristics for both devices. Besides, we investigate the impact of the effective masses extracted Density Functional Theory (DFT) simulations, showing that they are the key of not only the general thermionic emission behavior of simulated devices, but also the electron probability of experiencing tunneling phenomena. 2020-04-15T07:15:32Z 2020-04-15T07:15:32Z 2020-02-16 info:eu-repo/semantics/article Medina-Bailon, C.; Carrillo-Nunez, H.; Lee, J.; Sampedro, C.; Padilla, J.L.; Donetti, L.; Georgiev, V.; Gamiz, F.; Asenov, A. Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation. Micromachines 2020, 11, 204. [doi:10.3390/mi11020204] http://hdl.handle.net/10481/61207 10.3390/mi11020204 eng http://creativecommons.org/licenses/by/3.0/es/ info:eu-repo/semantics/openAccess Atribución 3.0 España MDPI