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      <dc:title>Simulation of 2D semiconductor based MOSFETs</dc:title>
      <dc:creator>Toral López, Alejandro</dc:creator>
      <dc:creator>González-Medina, Jose María</dc:creator>
      <dc:creator>González Marín, Enrique</dc:creator>
      <dc:creator>Marin-Sanchez, Antonio</dc:creator>
      <dc:creator>García Ruiz, Francisco Javier</dc:creator>
      <dc:creator>Godoy Medina, Andrés</dc:creator>
      <dc:description>In this work we address the simulation of 2D materials based Field Effect Transistors advancing a simple method to take into account the Density of States of arbitrary materials in a Drift-Diffusion transport scheme.</dc:description>
      <dc:date>2020-01-07T10:45:59Z</dc:date>
      <dc:date>2020-01-07T10:45:59Z</dc:date>
      <dc:date>2018-11-12</dc:date>
      <dc:type>info:eu-repo/semantics/conferenceObject</dc:type>
      <dc:identifier>A. Toral-Lopez et al. Simulation of 2D semiconductor based MOSFETs. 12th Spanish Conference on Electron Devices, Salamanca 2018</dc:identifier>
      <dc:identifier>http://hdl.handle.net/10481/58486</dc:identifier>
      <dc:language>eng</dc:language>
      <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
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