Modelling radiation damage to pixel sensors in the ATLAS detector Aaboud, M. Aguilar Saavedra, Juan Antonio Atlas Collaboration Detector modelling and simulations II Radiation-hard detectors Solid state detectors Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 ( 1015 1 MeV neq cm2). 2019-10-17T07:39:11Z 2019-10-17T07:39:11Z 2019-06-11 info:eu-repo/semantics/article Aaboud, Morad, et al. "Modelling radiation damage to pixel sensors in the ATLAS detector." Journal of Instrumentation 14 (2019). http://hdl.handle.net/10481/57393 10.1088/1748-0221/14/06/P06012 eng http://creativecommons.org/licenses/by/3.0/es/ info:eu-repo/semantics/openAccess Atribución 3.0 España IOP Publishing