• español 
    • español
    • English
    • français
  • FacebookPinterestTwitter
  • español
  • English
  • français
Ver ítem 
  •   DIGIBUG Principal
  • 1.-Investigación
  • Departamentos, Grupos de Investigación e Institutos
  • Grupo: Modelización y Predicción con Datos Funcionales (FQM307)
  • FQM307 - Artículos
  • Ver ítem
  •   DIGIBUG Principal
  • 1.-Investigación
  • Departamentos, Grupos de Investigación e Institutos
  • Grupo: Modelización y Predicción con Datos Funcionales (FQM307)
  • FQM307 - Artículos
  • Ver ítem
JavaScript is disabled for your browser. Some features of this site may not work without it.

An approach to non-homogenous phase-type distributions through multiple cut-points

[PDF] 2501.05863v1.pdf (784.9Kb)
Identificadores
URI: https://hdl.handle.net/10481/99287
DOI: https://doi.org/10.1080/08982112.2023.2168202
Exportar
RISRefworksMendeleyBibtex
Estadísticas
Ver Estadísticas de uso
Metadatos
Mostrar el registro completo del ítem
Autor
Ruiz-Castro, Juan Eloy; Acal González, Christian José; Roldán Aranda, Juan Bautista
Fecha
2023-01-27
Resumen
A new class of distributions based on phase-type distributions is introduced in the current paper to model lifetime data in the field of reliability analysis. This one is the natural extension of the distribution proposed by Acal et al. (One cut-point phase-type distributions in reliability. An application to resistive random access memories. Mathematics 9(21):2734, 2021) for more than one cut-point. Multiple interesting measures such as density function, hazard rate or moments, among others, were worked out both for the continuous and discrete case. Besides, a new EM-algorithm is provided to estimate the parameters by maximum likelihood. The results have been implemented computationally in R and simulation studies reveal that this new distribution reduces the number of parameters to be estimated in the optimization process and, in addition, it improves the fitting accuracy in comparison with the classical phase-type distributions, especially in heavy tailed distributions. An application is presented in the context of resistive memories with a new set of electron devices for nonvolatile memory circuits. In particular, the voltage associated with the resistive switching processes that control the internal behavior of resistive memories has been modeled with this new distribution to shed light on the physical mechanisms behind the operation of these memories.
Colecciones
  • FQM307 - Artículos

Mi cuenta

AccederRegistro

Listar

Todo DIGIBUGComunidades y ColeccionesPor fecha de publicaciónAutoresTítulosMateriaFinanciaciónPerfil de autor UGREsta colecciónPor fecha de publicaciónAutoresTítulosMateriaFinanciación

Estadísticas

Ver Estadísticas de uso

Servicios

Pasos para autoarchivoAyudaLicencias Creative CommonsSHERPA/RoMEODulcinea Biblioteca UniversitariaNos puedes encontrar a través deCondiciones legales

Contacto | Sugerencias