Performance of FDSOI double-gate dual-doped reconfigurable FETs

Navarro Moral, Carlos; Donetti, Luca; Padilla De la Torre, José Luis; Medina Bailón, Cristina; Ávila Gómez, Jorge Pablo; Galdón Gil, José Carlos; Recio Muñoz, María Isabel; Márquez González, Carlos; Sampedro Matarín, Carlos; Gámiz Pérez, Francisco Jesús

doi:10.1016/j.sse.2022.108336

1-s2.0-S0038110122001083-main.pdf (2.913Mo)

Identificadores

URI: http://hdl.handle.net/10481/75684

DOI: 10.1016/j.sse.2022.108336

Exportar

Editorial

Elsevier

Materia

Reconfigurable

Reprogrammable

Schottky

Barrier

FET

RFET

Date

2022-04-21

Referencia bibliográfica

C. Navarro... [et al.]. Performance of FDSOI double-gate dual-doped reconfigurable FETs, Solid-State Electronics, Volume 194, 2022, 108336, ISSN 0038-1101, [https://doi.org/10.1016/j.sse.2022.108336]

Patrocinador

Universidad de Granada/CBUA PID2020-119668GB-I00 EU MSCA 895322 TRAPS2D TEC2017 89800R

Résumé

In this work, the electrical performance of a novel reprogrammable FDSOI device with dual-doping at source/ drain and only two top gates is investigated through advanced 3D TCAD simulations. The static and dynamic operations are evaluated and compared with those of traditional Schottky barrier RFETs and standard 28 nm FDSOI MOS transistors under manufacturable geometries.

Colecciones

TIC216 - Artículos

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