Performance of FDSOI double-gate dual-doped reconfigurable FETs
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Navarro Moral, Carlos; Donetti, Luca; Padilla De la Torre, José Luis; Medina Bailón, Cristina; Ávila Gómez, Jorge Pablo; Galdón Gil, José Carlos; Recio Muñoz, María Isabel; Márquez González, Carlos; Sampedro Matarín, Carlos; Gámiz Pérez, Francisco JesúsEditorial
Elsevier
Materia
Reconfigurable Reprogrammable Schottky Barrier FET RFET
Date
2022-04-21Referencia bibliográfica
C. Navarro... [et al.]. Performance of FDSOI double-gate dual-doped reconfigurable FETs, Solid-State Electronics, Volume 194, 2022, 108336, ISSN 0038-1101, [https://doi.org/10.1016/j.sse.2022.108336]
Sponsorship
Universidad de Granada/CBUA PID2020-119668GB-I00 EU MSCA 895322 TRAPS2D TEC2017 89800RAbstract
In this work, the electrical performance of a novel reprogrammable FDSOI device with dual-doping at source/
drain and only two top gates is investigated through advanced 3D TCAD simulations. The static and dynamic
operations are evaluated and compared with those of traditional Schottky barrier RFETs and standard 28 nm
FDSOI MOS transistors under manufacturable geometries.