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dc.contributor.authorPerucchini, Marta
dc.contributor.authorGonzález Marín, Enrique 
dc.date.accessioned2022-01-27T07:47:36Z
dc.date.available2022-01-27T07:47:36Z
dc.date.issued2022-01-05
dc.identifier.citationPerucchini, M... [et al.]. Electronic Transport in 2D-Based Printed FETs from a Multiscale Perspective. Adv. Electron. Mater. 2022, 2100972. [https://doi.org/10.1002/aelm.202100972]es_ES
dc.identifier.urihttp://hdl.handle.net/10481/72505
dc.descriptionThe authors gratefully acknowledge the ERC PEP2D (contract no. 770047) and H2020 WASP (contract no. 825213) and the Crosslab Department of Excellence project for financial support. E.G.M. also acknowledges the support by the Spanish MCI through the project PID2020-116518GB-I00 and by the Junta de Andalucia-Consejeria de Economia y Conocimiento/FEDER-EU through the Project A-TIC-646-UGR20. Open access funding provided by Universita degli Studi di Pisa within the CRUI-CARE Agreement.es_ES
dc.description.abstractAs 2D materials (2DMs) gain the research limelight as a technological option for obtaining on-demand printed low-cost integrated circuits with reduced environmental impact, theoretical methods able to provide the necessary fabrication guidelines acquire fundamental importance. Here, a multiscale modeling technique is exploited to study electronic transport in devices consisting of a printed 2DM network of flakes. The approach implements a Monte Carlo scheme to generate the flake distribution. By means of ab initio density functional theory calculations together with non equilibrium Green’s functions formalism, detailed physical insights on flake-to-flake transport mechanisms are provided. This later feeds a 3D drift-diffusion and Poisson solution to compute self-consistently transport and electrostatics in the device. The method is applied to MoS2 and graphene-based dielectrically gated FETs, highlighting the impact of the structure density and variability on the mobility and sheet resistance. The prediction capability of the proposed approach is validated against electrical measurements of in-house printed graphene conductive lines as a function of film thickness, demonstrating its strong potential as a guide for future experimental activity in the field.es_ES
dc.description.sponsorshipERC PEP2D 770047es_ES
dc.description.sponsorshipH2020 WASP 825213es_ES
dc.description.sponsorshipCrosslab Department of Excellence projectes_ES
dc.description.sponsorshipSpanish Government PID2020-116518GB-I00es_ES
dc.description.sponsorshipJunta de Andalucia-Consejeria de Economia y Conocimiento/FEDER-EU A-TIC-646-UGR20es_ES
dc.description.sponsorshipUniversita degli Studi di Pisa within the CRUI-CARE Agreementes_ES
dc.language.isoenges_ES
dc.publisherWileyes_ES
dc.rightsAtribución 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/es/*
dc.subject2D materialses_ES
dc.subjectDrift-diffusiones_ES
dc.subjectField-effect transistores_ES
dc.subjectMulti-scale simulationses_ES
dc.subjectNetworkes_ES
dc.subjectPrintable electronicses_ES
dc.titleElectronic Transport in 2D-Based Printed FETs from a Multiscale Perspectivees_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/H2020/770047es_ES
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/H2020/825213es_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.identifier.doi10.1002/aelm.202100972
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones_ES


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