Memory Operation of Z2-FET Without Selector at High Temperature
Metadatos
Mostrar el registro completo del ítemEditorial
IEEE
Materia
Matrix memory operation High temperature Z2-FET 1T-DRAM
Fecha
2021-07-02Referencia bibliográfica
S. Kwon... [et al.]. "Memory Operation of Z²-FET Without Selector at High Temperature," in IEEE Journal of the Electron Devices Society, vol. 9, pp. 658-662, 2021, doi: [10.1109/JEDS.2021.3094104]
Patrocinador
REMINDER European Project 687931; Ministry of Trade, Industry, Energy (MOTIE) 10080526; Korea Semiconductor Research Consortium (KSRC)Resumen
The electrical performance of Z2-FET and memory operations of matrix are demonstrated at
high temperatures up to 125 ◦C. The sharp subthreshold slope is maintained and the reliable operation is
ensured within the memory window of 229 mV even though the turn on voltage of ‘0’- and ‘1’-states are
shifted to lower voltage. The ‘0’-state current remains low while the ‘1’-state current gradually increases
as the temperature increases leading to higher current margin. At the elevated temperature, the potential
barriers are slightly reduced but does not collapse, which leads to the successful memory operation.
However, increasing the temperature over 125 ◦C, the potential barrier at the ‘0’-state is significantly
reduced and causes the failure of memory operation with high ‘0’-state current. The matrix demonstrates
reliable memory operations without using selector circuits even at 125 ◦C.