Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices
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Medina Bailón, Cristina; Padilla De la Torre, José Luis; Sadi, Toufik; Sampedro Matarín, Carlos; Godoy Medina, Andrés; Donetti, Luca; Georgiev, Vihar; Gámiz Pérez, Francisco Jesús; Asenov, AsenEditorial
Institute of Electrical and Electronics Engineers (IEEE)
Materia
direct Source-to-Drain tunneling gate leakage current band-to-band tunneling Multi-Subband Ensemble Monte Carlo FDSOI DGSOI FinFET
Date
2019-01Referencia bibliográfica
C. Medina-Bailon et al., "Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices," in IEEE Transactions on Electron Devices, vol. 66, no. 3, pp. 1145-1152, March 2019, doi: 10.1109/TED.2019.2890985.
Abstract
Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, therefore advanced device simulators need to include them in an appropriate way. This work presents the modeling and implementation of direct source-to-drain tunneling (S/D tunneling), gate leakage mechanisms (GLM) accounting for both direct and trap assisted tunneling, and non-local band–to–band tunneling (BTBT) phenomena in a Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator along with their simultaneous application for the study of ultrascaled FDSOI, DGSOI, and FinFET devices. We find that S/D tunneling is the prevalent phenomena for the three devices, and it is increasingly relevant for short channel lengths.