Compact Modeling of Multi-layered MoS2 FETs including Negative Capacitance Effect
Metadatos
Mostrar el registro completo del ítemAutor
Nandan, Keshari; Toral López, Alejandro; Marin-Sanchez, Antonio; García Ruiz, Francisco Javier; González Marín, EnriqueEditorial
IEEE-INST Electrical Electronics Engineers INC
Fecha
2020Referencia bibliográfica
Nandan, K., Yadav, C., Rastogi, P., Toral-Lopez, A., Marin-Sanchez, A., Marin, E. G., ... & Chauhan, Y. S. (2020). Compact Modeling of Multi-Layered MoS 2 FETs Including Negative Capacitance Effect. IEEE Journal of the Electron Devices Society, 8, 1177-1183. [DOI 10.1109/JEDS.2020.3021031]
Patrocinador
Swarnajayanti Fellowship; FIST Scheme of Department of Science and Technology (DST), Government of India; Spanish Government Grant FPU16/04043; Juan de la Cierva Incorporación (MINECO/AEI) IJCI-2017-32297Resumen
Abstract—In this paper, we present a channel thickness dependent
analytical model for MoS2 symmetric double-gate FETs
including negative capacitance (NC) effect. In the model development,
first thickness dependent model of the baseline 2D FET is
developed, and later NC effect is included in the model using the
Landau-Khalatnikov (L-K) relation. To validate baseline model
behavior, density functional theory (DFT) calculations are taken
into account to obtain numerical data for the K and valley
dependent effective masses and differences in the energy levels
of N-layer (N = 1, 2, 3, 4, and 5) MoS2. The calculated layer
dependent parameters using DFT theory are further used in a
drift-diffusion simulator to obtain electric characteristics of the
baseline 2D FET for model validation. The model shows excellent
match for drain current and total gate capacitance of baseline
FET and NCFET against the numerical simulation.
Index Terms—Metal-oxide-semiconductor field-effect transistor
(MOSFET), Compact modeling, molybdenum disulfide
(MoS2), transition metal dichalcogenide (TMD), Double
Gate (DG), Negative Capacitance FET (NCFET).