Versatile model for the contact region of organic thin-film transistors
Metadatos
Mostrar el registro completo del ítemAutor
Romero Cáceres, Adrián; González Peñalver, Jesús; M. Jamal, Deen; Jiménez Tejada, Juan AntonioEditorial
Elsevier
Materia
Organic thin-film transistor (OTFT) Transistor model Contact effects Parameter extraction Multi-objective optimization Evolutionary algorithms Ammonia sensor
Fecha
2020Referencia bibliográfica
A. Romero, J. González, M.J. Deen, J.A. Jiménez-Tejada, Versatile model for the contact region of organic thin-film transistors, Organic Electronics, (2020), 77, 105523.
Patrocinador
This work was supported by projects MAT2016-76892-C3-3-R, TIN2015-67020-P and PGC2018-098813-B-C31 funded by the Spanish Government and “European Regional Development Funds (ERDF)”. This work was also supported by NSERC Green Electronics Network (GreEN), Grant Number NETGP 508526–17.Resumen
Contact effects in organic thin film transistors (OTFTs) remain an important problem to be solved in these devices. Therefore, the correct physio-chemical modeling of the contact regions in OTFTs is necessary. In this work, a standard model for the contact region of OTFTs is proposed. It is a versatile model that describes the current-voltage characteristics of different kinds of contacts. It reproduces the behavior of Schottky barrier or space-charge limited contacts. It is a simple unified model since only a single parameter is necessary in order to distinguish between both kinds of contacts. The model is easily integrated in a generic compact model for the current-voltage characteristics of OTFTs. The resulting compact model, used in combination with an evolutionary parameter extraction procedure, allows to extract the intrinsic parameters and the current-voltage curves at the contact of single short-channel transistors. There is no need to use transistors with multiple channel lengths to accurately characterize the contact region or the active channel of the transistor. The model is tested with published experimental data of OTFTs with Schottky barrier or space-charge limited contacts. Finally, the method has been used as a diagnostic tool to analyze how an ammonia sensor reacts to different concentrations of the ammonia gas. Interestingly, alterations in the contact region have been detected when the gas concentration varies, transforming the space-charge limited contact of a pristine OTFT into a Schottky barrier contact under the exposure of gas.