Experimental Demonstration of Operational Z2-FET Memory Matrix

Navarro Moral, Santiago; Navarro Moral, Carlos; Márquez González, Carlos; El Dirani, Hassam; Galy, Philippe; Bawedin, Maryline; Pickering, Andy; Cristoloveanu, Sorin; Gámiz Pérez, Francisco Jesús

doi:10.1109/LED.2018.2819801

Post-Print (1.804Mo)

Identificadores

URI: http://hdl.handle.net/10481/57444

DOI: 10.1109/LED.2018.2819801

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Materia

1T-DRAM

Matrix

Z2-FET

Capacitorless

Fully depleted (FD)

Date

2018-03-26

Patrocinador

H2020 REMINDER project (grant agreement No 687931), TEC2014-59730and P12-TIC-1996 are thanked for financial support.

Résumé

In this letter, a functional Z2-FET DRAM memory matrix is experimentally demonstrated for the first time. Word-level operation with simultaneous reading and programming accesses is successfully proved. Disturbance is also explored, and the results demonstrate bitline disturbance immunity. Furthermore, the fabricated memory matrix, which includes only one selector per word-line, facilitates the scalability of the memory for increasing array dimensions.

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