Simulation of 2D semiconductor based MOSFETs

dc.contributor.author	Toral López, Alejandro
dc.contributor.author	González-Medina, Jose María
dc.contributor.author	González Marín, Enrique
dc.contributor.author	Marin-Sanchez, Antonio
dc.contributor.author	Medina, Alberto
dc.contributor.author	García Ruiz, Francisco Javier
dc.contributor.author	Godoy Medina, Andrés
dc.date.accessioned	2019-06-03T05:53:43Z
dc.date.available	2019-06-03T05:53:43Z
dc.date.issued	2018-11
dc.identifier.uri	http://hdl.handle.net/10481/55920
dc.description.abstract	In this work we address the simulation of 2D materials based Field Effect Transistors advancing a simple method to take into account the Density of States of arbitrary materials in a Drift-Diffusion transport scheme.	es_ES
dc.description.sponsorship	Pervasive Electronics Advance Research Laboratory (PEARL) TIC-250	es_ES
dc.language.iso	eng	es_ES
dc.subject	MOSFET	es_ES
dc.subject	2D materials	es_ES
dc.subject	Drift-Diffusion	es_ES
dc.title	Simulation of 2D semiconductor based MOSFETs	es_ES
dc.type	info:eu-repo/semantics/conferenceObject	es_ES
dc.rights.accessRights	info:eu-repo/semantics/openAccess	es_ES