@misc{10481/78310,
year = {2022},
month = {9},
url = {https://hdl.handle.net/10481/78310},
abstract = {Variability is an inherent property of memristive devices based on the switching
of resistance in a simple metal–oxide–metal structure compatible with the
standard complementary metal–oxide–semiconductor fabrication process. For
each specific structure, the variability should be measured and assessed as both
the negative and positive factors for different applications of memristive devices.
In this report, it is shown how this variability can be extracted and analyzed for
such main parameters of resistive switching as the set and reset voltages/currents
and how it depends on the methodology used and experimental conditions.
The obtained results should be taken into account in the design and predictive
simulation of memristive devices and circuits.},
organization = {Junta de Andalucia},
organization = {European Commission	A-TIC-117-UGR18	
B-TIC-624-UGR20	
IE2017-5414},
organization = {Government of the Russian Federation	074-02-2018-330 (2)},
organization = {Ministry of Science and Higher Education of the Russian Federation	N-466-99_2021-2023},
publisher = {Wiley},
keywords = {Memristors},
keywords = {Resistive switching},
keywords = {Resistive random access memory},
keywords = {Tantalum oxide},
keywords = {Variabilities},
keywords = {Yttria-stabilized zirconia},
title = {A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices},
doi = {10.1002/pssa.202200520},
author = {Maldondado Correa, David and Jiménez Molinos, Francisco and Roldán Aranda, Juan Bautista},
}