@misc{10481/70857,
year = {2021},
month = {9},
url = {http://hdl.handle.net/10481/70857},
abstract = {An advanced new methodology is presented to improve parameter extraction in resistive
memories. The series resistance and some other parameters in resistive memories are obtained,
making use of a two-stage algorithm, where the second one is based on quasi-interpolation on nonuniform
partitions. The use of this latter advanced mathematical technique provides a numerically
robust procedure, and in this manuscript, we focus on it. The series resistance, an essential parameter
to characterize the circuit operation of resistive memories, is extracted from experimental curves
measured in devices based on hafnium oxide as their dielectric layer. The experimental curves
are highly non-linear, due to the underlying physics controlling the device operation, so that a
stable numerical procedure is needed. The results also allow promising expectations in the massive
extraction of new parameters that can help in the characterization of the electrical device behavior.},
organization = {Junta de Andalucia},
organization = {European Commission	A.TIC.117.UGR18	
IE2017-5414},
publisher = {MDPI},
keywords = {Resistive random access memories},
keywords = {Series resistance},
keywords = {Modeling},
keywords = {Parameter extraction},
keywords = {Quasi-interpolation},
title = {Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes},
doi = {10.3390/math9172159},
author = {Ibáñez Pérez, María José and Barrera Rosillo, Domingo and Maldonado Correa, David and Yáñez García, Rafael José and Roldán Aranda, Juan Bautista},
}