@misc{10481/58483,
year = {2018},
month = {11},
url = {http://hdl.handle.net/10481/58483},
abstract = {A charge model for four-terminal two-dimensional (2D)
semiconductor based field-effect transistors (FETs) is
proposed. The model is suitable for describing the
dynamic response of these devices under time-varying
terminal voltage excitations.},
organization = {This work has received  funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No GrapheneCore2 785219, and from Ministerio de Economía  y  Competitividad  under  GrantsTEC2015-67462-C2-1-Rand TEC2017-89955-R(MINECO/FEDER).},
title = {Charge model of four-terminal 2D semiconductor FETs},
author = {Pasadas, Francisco and Jimenez, David and González Marín, Enrique and García Ruiz, Francisco Javier and Godoy Medina, Andrés},
}