TY  - GEN 
AU  - Alper, C
AU  - Padilla De la Torre, José Luis
AU  - Palestri, Pierpaolo
AU  - Ionescu, Adrian Mihai
PY  - 2017
UR  - https://hdl.handle.net/10481/96333
AB  - We propose and validate a novel design methodology for logic circuits that exploits the conduction mechanism and the presence of two independently biased gates (“n-gate” and “p-gate”) of the electron-hole bilayer tunnel field-effect transistor...
LA  - eng
PB  - Institute of Electrical and Electronics Engineers (IEEE)
KW  - Band-to-band tunneling
KW  - Tunnel field-effect transistor (TFET)
KW  - 2D-2D tunneling
TI  - A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET
DO  - 10.1109/JEDS.2017.2758018
ER  -