TY  - GEN 
AU  - Maldonado, David
AU  - Roldán Aranda, Juan Bautista
PY  - 2024
UR  - https://hdl.handle.net/10481/94787
AB  - The drift characteristics of valence change memory (VCM) devices have been analyzed through both
experimental analysis and 3D kinetic Monte Carlo (kMC) simulations. By simulating six distinct low-resistance
states (LRS) over a 24-hour period at room...
LA  - eng
PB  - Royal Society of Chemistry
TI  - Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO2-based RRAM devices
DO  - 10.1039/d4nr02975e
ER  -