TY  - JOUR 
AU  - Márquez González, Carlos
AU  - Navarro Moral, Carlos
AU  - Karg, Siegfried
AU  - Ortega López, Rubén
AU  - Zota, Cezar
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2024
UR  - https://hdl.handle.net/10481/93093
AB  - III-V compounds have recently attracted high expectation due to their potential to relieve the semiconductor
scaling constraints. Scaled indium gallium arsenide (InGaAs)
transistors have recently proved to operate as single transistor
DRAM...
LA  - eng
PB  - IEEE
KW  - Reliability
KW  - Semiconductors
KW  - 1T-DRAM
KW  - III-V materials
TI  - Low-Frequency Noise in InGaAs-OI Transistors
DO  - 10.1109/TED.2024.3392180
ER  -