TY  - GEN 
AU  - Lee, Ming-Wen
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2023
UR  - https://hdl.handle.net/10481/83871
AB  - In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin
gate structures fabricated to improve device linearity for Ka-band application are reported. Within
the proposed study of planar, one-etched-fin, four-etched-fin,...
LA  - eng
PB  - MDPI
KW  - AlGaN/GaN HEMTs
KW  - Etched-fin gate structure
KW  - Ka band
KW  - Linearity
KW  - SiC substrate
TI  - Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications
DO  - 10.3390/mi14050931
ER  -