TY  - GEN 
AU  - Navarro Moral, Carlos
AU  - Donetti, Luca
AU  - Padilla De la Torre, José Luis
AU  - Medina Bailón, Cristina
AU  - Galdón Gil, José Carlos
AU  - Márquez González, Carlos
AU  - Sampedro Matarín, Carlos
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2023
UR  - https://hdl.handle.net/10481/80909
AB  - Through 3D-TCAD simulations this work aims to demonstrate the benefits of Reconfigurable FETs based on dual doping with respect to the Schottky junctions counterparts using the 28 nm FDSOI platform. These devices feature both N and P dopant species at...
LA  - eng
KW  - Ambipolar
KW  - Barrier
KW  - FDSOI
KW  - Polarity
KW  - Reconfigurable
KW  - Reprogrammable
KW  - RFET
KW  - Schottky
TI  - 3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology
DO  - 10.1016/j.sse.2022.108577
ER  -