TY  - GEN 
AU  - Calomarde, Antonio
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2022
UR  - http://hdl.handle.net/10481/75098
AB  - This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel. More than 1700 3D TCAD simulations have been...
LA  - eng
PB  - IEEE
KW  - Charge collection
KW  - Single event cross section
KW  - Radiation hardening
KW  - Soft error
KW  - Single event transient (SET)
KW  - Single event upset (SEU)
KW  - FinFET
KW  - 3D TCAD modeling
TI  - Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact
DO  - 10.1109/ACCESS.2022.3171813
ER  -