TY  - JOUR 
AU  - Ristic, Goran S.
AU  - Palma López, Alberto José
AU  - Lalena, Antonio M.
PY  - 2022
UR  - http://hdl.handle.net/10481/74734
AB  - The radiation-sensitive field-effect transistors (RADFETs) with an oxide thickness of 400 nm are irradiated with
gate voltages of 2, 4 and 6 V, and without gate voltage. A detailed analysis of the mechanisms responsible for
the creation of traps...
LA  - eng
PB  - Elsevier
KW  - pMOS radiation dosimeter
KW  - RADFETs
KW  - Irradiation
KW  - Sensitivity
KW  - Annealing
KW  - Fading
TI  - Sensitivity and fading of irradiated RADFETs with different gate voltages
DO  - 10.1016/j.nima.2022.166473
ER  -