TY  - JOUR 
AU  - Márquez González, Carlos
AU  - Salazar, Norberto
AU  - Gity, Farzan
AU  - Navarro Moral, Carlos
AU  - Mirabelli, Gioele
AU  - Galdón, José Carlos
AU  - Duffy, Ray
AU  - Navarro Moral, Santiago
AU  - Hurley, Paul
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2020
UR  - http://hdl.handle.net/10481/70035
AB  - Molybdenum disulfide (MoS2) MOSFETs have been widely reported to exhibit hysteresis behavior, which is usually attributed to charge trapping effects due to defective/sub-stoichiometric compositions in the material, or defects near, or at, the...
LA  - eng
PB  - IOP Publishing
KW  - Defects
KW  - Hysteresis
KW  - MoS2
KW  - Schottky barrier transistors
KW  - Two-Dimensional Materials
KW  - Reliability
TI  - Investigating the transient response of Schottky barrier back-gated MoS2 transistors
DO  - 10.1088/2053-1583/ab7628
ER  -