TY  - JOUR 
AU  - Ristic, Goran S.
AU  - Andjelkovic, Marko S.
AU  - Duane, Russell
AU  - Palma López, Alberto José
AU  - Jakšić, Aleksandar B.
PY  - 2021
UR  - http://hdl.handle.net/10481/69772
AB  - We investigated the influence of gamma radiation of 50 Gy(H2O) on radiation-sensitive
p-channel metal-oxide-semiconductor field-effect transistors with an Al gate (RADFETs) with
gate oxide thicknesses of 400 and 1000 nm and gate voltages of 0 and 5...
LA  - eng
PB  - MYU
KW  - RADFETs
KW  - Radiation dosimeters
KW  - Radiation
KW  - Annealing
KW  - Fading
TI  - Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm
DO  - 10.18494/SAM.2021.3425
ER  -