TY  - GEN 
AU  - Medina Bailón, Cristina
AU  - Padilla De la Torre, José Luis
AU  - Sadi, Toufik
AU  - Sampedro Matarín, Carlos
AU  - Godoy Medina, Andrés
AU  - Donetti, Luca
AU  - Georgiev, Vihar
AU  - Gámiz Pérez, Francisco Jesús
AU  - Asenov, Asen
PY  - 2019
UR  - http://hdl.handle.net/10481/69443
AB  - Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, therefore advanced device simulators need to include them in an appropriate way. This work presents the modeling and implementation of direct source-to-drain...
LA  - eng
PB  - Institute of Electrical and Electronics Engineers (IEEE)
KW  - direct Source-to-Drain tunneling
KW  - gate leakage current
KW  - band-to-band tunneling
KW  - Multi-Subband Ensemble Monte Carlo
KW  - FDSOI
KW  - DGSOI
KW  - FinFET
TI  - Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices
DO  - 10.1109/TED.2019.2890985
ER  -