TY  - JOUR 
AU  - Nandan, Keshari
AU  - Toral López, Alejandro
AU  - Marin-Sanchez, Antonio
AU  - García Ruiz, Francisco Javier
AU  - González Marín, Enrique
PY  - 2020
UR  - http://hdl.handle.net/10481/65070
AB  - Abstract—In this paper, we present a channel thickness dependent
analytical model for MoS2 symmetric double-gate FETs
including negative capacitance (NC) effect. In the model development,
first thickness dependent model of the baseline 2D FET...
LA  - eng
PB  - IEEE-INST Electrical Electronics Engineers INC
TI  - Compact Modeling of Multi-layered MoS2 FETs including Negative Capacitance Effect
DO  - 10.1109/JEDS.2020.3021031
ER  -