TY - JOUR AU - Medina Bailón, Cristina AU - Sadi, T. AU - Sampedro Matarín, Carlos AU - Padilla García, José Luis AU - Donetti, Luca AU - Georgiev, Vihar AU - Gámiz Pérez, Francisco Jesús AU - Asenov, Asen PY - 2019 UR - http://hdl.handle.net/10481/61980 AB - From a modeling point of view, the inclusion of adequate physical phenomena is mandatory when analyzing the behavior of new transistor architectures. In particular, the high electric field across the ultra-thin insulator in aggressively scaled... LA - eng PB - Springer Nature KW - Gate leakage mechanism KW - Direct tunneling KW - Trap assisted tunneling TI - Impact of the Trap Attributes on the Gate Leakage Mechanisms in a 2D MS-EMC Nanodevice Simulator DO - 10.1007/978-3-030-10692-8_30 ER -