TY  - JOUR 
AU  - Toral López, Alejandro
AU  - González Marín, Enrique
AU  - Pasadas, Francisco
AU  - González-Medina, Jose María
AU  - Ruiz, Francisco G.
AU  - Jiménez, David
AU  - Godoy Medina, Andrés
PY  - 2019
UR  - http://hdl.handle.net/10481/61613
AB  - Graphene-based devices are planned to augment the functionality of Si and III-V based
technology in radio-frequency (RF) electronics. The expectations in designing graphene field-effect
transistors (GFETs) with enhanced RF performance have attracted...
LA  - eng
PB  - MDPI
KW  - Access region
KW  - GFET
TI  - GFET Asymmetric Transfer Response Analysis through Access Region Resistances
DO  - 10.3390/nano9071027
ER  -