TY  - GEN 
AU  - Marquez, Carlos
AU  - Navarro, Carlos
AU  - Navarro, Santiago
AU  - Padilla De la Torre, José Luis
AU  - Donetti, Luca
AU  - Sampedro Matarín, Carlos
AU  - Galy, Philippe
AU  - Kim, Yong Tae
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2019
UR  - http://hdl.handle.net/10481/59522
AB  - This paper addresses the low-frequency noise characterization of Z2-FET structures. These
double-gated p-i-n diode devices have been fabricated at STMicroelectronics in an ultrathin body and
box (UTBB) 28-nm FDSOI technology and designed to operate...
LA  - eng
PB  - IEEE
KW  - Noise measurement
KW  - Semiconductor device reliability
KW  - Silicon on insulator technology
TI  - On the Low-Frequency Noise Characterization of Z2-FET Devices
DO  - 10.1109/ACCESS.2019.2907062
ER  -