TY  - GEN 
AU  - Pasadas, Francisco
AU  - González Marín, Enrique
AU  - Toral López, Alejandro
AU  - García Ruiz, Francisco Javier
AU  - Godoy Medina, Andrés
PY  - 2019
UR  - http://hdl.handle.net/10481/58755
AB  - We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor-based field-effect
transistors, which provides explicit expressions for the drain current, terminal charges, and intrinsic capacitances. The drain...
LA  - eng
PB  - Springer Nature
TI  - Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
DO  - 10.1038/s41699-019-0130-6
ER  -