TY  - JOUR 
AU  - Navarro Moral, Carlos
AU  - Karg, Sigfried
AU  - Márquez González, Carlos
AU  - Navarro Moral, Santiago
AU  - Convertino, Clarissa
AU  - Zota, Cezar
AU  - Czornomaz, Lukas
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2019
UR  - http://hdl.handle.net/10481/57455
AB  - Dynamic random access memory (DRAM) cells are commonly used in electronic devices and are formed from a single transistor and capacitor. Alternative approaches, which are based on the floating body effect, have been proposed that could...
LA  - eng
KW  - 1T-DRAM
KW  - III-V
KW  - Indium Galium Arsenide
KW  - MSDRAM
KW  - Capacitorless
KW  - Fully depleted (FD)
KW  - MSDRAM
TI  - Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
DO  - 10.1038/s41928-019-0282-6
ER  -