TY  - JOUR 
AU  - Navarro Moral, Carlos
AU  - Navarro Moral, Santiago
AU  - Márquez González, Carlos
AU  - Padilla De la Torre, José Luis
AU  - Galy, Philippe
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2019
UR  - http://hdl.handle.net/10481/57447
AB  - 3-D numerical technology computer-aided design simulations, based on experimental results, are performed to study the origin of the large Z 2 -FET dynamic random access memory (DRAM) memory cell-to-cell variability on fully depleted...
LA  - eng
KW  - 1T-DRAM
KW  - Z2-FET
KW  - Semiconductor memories
KW  - Silicon on insulator
KW  - Capacitorless
KW  - Fully depleted (FD)
TI  - 3D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z2-FETs
DO  - 10.1109/TED.2019.2912457
ER  -