TY  - GEN 
AU  - Navarro Moral, Carlos
AU  - Duan, Meng
AU  - Parihar, Mukta Singh
AU  - Adamu-Lema, Fikru
AU  - Coseman, Stefan
AU  - Lacord, Joris
AU  - Lee, Kyunghwa
AU  - Sampedro Matarín, Carlos
AU  - Cheng, Binjie
AU  - El Dirani, Hassam
AU  - Barbe, Jean-Charles
AU  - Fonteneau, Pascal
AU  - Kim, Seong
AU  - Cristoloveanu, Sorin
AU  - Bawedin, Maryline
AU  - Millar, Campbell
AU  - Galy, Philippe
AU  - Le Royer, Cyrille
AU  - Karg, Sigfried
AU  - Riel, Heike
AU  - Wells, Paul
AU  - Kim, Yong Tae
AU  - Asenov, Asen
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2017
UR  - http://hdl.handle.net/10481/57442
AB  - 2-D numerical simulations are used to demonstrate the Z2-FET as a competitive embedded capacitorless dynamic random access memory cell for low-power applications. Experimental results in 28-nm fully depleted silicon on insulator technology are used to...
LA  - eng
KW  - 1T-DRAM
KW  - Z2-FET
KW  - Capacitorless
KW  - Fully depleted (FD)
TI  - Z2-FET as Capacitor-Less eDRAM Cell For High-Density Integration
DO  - 10.1109/TED.2017.2759308
ER  -