TY  - JOUR 
AU  - Donetti, Luca
AU  - Sampedro Matarín, Carlos
AU  - García Ruiz, Francisco Javier
AU  - Godoy Medina, Andrés
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2019
UR  - http://hdl.handle.net/10481/56526
AB  - We thoroughly compare the DC electrical behavior of n-MOS transistors based on Si nanowires with 〈 1 0 0 〉 and 〈 1 1 0 〉 channel orientations by means of Multi-Subband Ensemble Monte Carlo simulations. We find that the drain current depends on the...
LA  - eng
PB  - Elsevier
KW  - Gate-all-around MOSFET
KW  - Monte Carlo simulation
KW  - Multi-subband
KW  - Short-channel effects
KW  - Nanowire orientation
TI  - A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations
DO  - 10.1016/j.sse.2019.03.044
ER  -