TY  - JOUR 
AU  - Padilla De la Torre, José Luis
AU  - Medina Bailón, Cristina
AU  - Alper, C
AU  - Gámiz Pérez, Francisco Jesús
AU  - Ionescu, Adrian Mihai
PY  - 2018
SN  - 0003-6951
SN  - 1077-3118
UR  - http://hdl.handle.net/10481/55899
AB  - Electron–Hole Bilayer Tunneling Field-Effect Transistors are typically based on band-to-band
tunneling processes between two layers of opposite charge carriers where tunneling directions and
gate-induced electric fields are mostly aligned (so-called...
LA  - eng
PB  - American Institute of Physics
TI  - Confinement-induced InAs/GaSb heterojunction electron–hole bilayer tunneling fieldeffect transistor
ER  -