TY  - THES 
A3  - Roldán Aranda, Juan Bautista
AU  - Pérez Villada, Manuel
A4  - Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores
PY  - 2014
UR  - http://hdl.handle.net/10481/33513
AB  - In this work we introduce an analytical model for square Gate
All Around (GAA)
MOSFETs with rounded corners including quantum effects. With
the model developed
it is possible to provide an analytical description of the 2D
inversion charge...
LA  - eng
KW  - Gate all around (GAA)
KW  - Inversion charge distribution function (ICDF)
KW  - MOSFET
KW  - Metal oxide semiconductor field-effect transistors
TI  - An analytical model for the inversion charge distribution in square GAA MOSFETs with rounded corners
M3  - info:eu-repo/semantics/masterThesis
DO  - 10.30827/Digibug.33513
ER  -