TY  - GEN 
AU  - González Marín, Enrique
AU  - García Ruiz, Francisco Javier
AU  - Tienda-Luna, Isabel María
AU  - Godoy Medina, Andrés
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2012
UR  - http://hdl.handle.net/10481/32936
AB  - In this work, a simulation-based study of the gate capacitance of III-V nanowires is performed by using a 2D Schrödinger-Poisson solver. The effective mass approximation, including non-parabolic corrections, is
used to model the semiconductor...
LA  - eng
KW  - III-V compound semiconductors
KW  - Non-parabolic relationship
KW  - Nanowire
KW  - Density of states
KW  - Gate capacitance
TI  - Study of the Gate Capacitance of GaAs, InAs and InGaAs Nanowires
ER  -