TY  - GEN 
AU  - López, A.
AU  - González, M.B.
AU  - Cantudo, A.
AU  - Saludes Tapia, M.
AU  - Ríos, P
AU  - Jiménez Molinos, F.
AU  - Roldán, J.B.
AU  - Villena, M.A.
PY  - 2026
UR  - https://hdl.handle.net/10481/112381
AB  - We systematically investigated TiN/Ti/HfO2/W memristive architectures by varying the HfO2 and the Ti layer thickness ratios to optimize memory window characteristics and switching stability. Devices with balanced thickness configurations between the...
LA  - eng
PB  - Elsevier
KW  - Memristors
KW  - Resistive memory
KW  - kinetic Monte Carlo simulation
TI  - Thickness-dependent resistive switching in engineered TiN/Ti/HfO2/W memristors
DO  - 10.1016/j.micrna.2026.208658
ER  -