TY  - GEN 
AU  - Donetti, Luca
AU  - Medina Bailón, Cristina
AU  - Padilla De la Torre, José Luis
AU  - Sampedro Matarín, Carlos
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2025
UR  - https://hdl.handle.net/10481/110243
AB  - The capacitance of the gate oxide is a crucial parameter to model the performance of MOSFETs. The traditional expression used to compute it stems from the parallel-plate capacitor formula. While its use is appropriate for planar devices, it has been...
LA  - spa
KW  - Equivalent oxide thickness (EOT)
KW  - gate insulator capacitance
KW  - gate-all-around (GAA)
KW  - MOSFET
KW  - nanosheet MOSFET
TI  - On the Capacitance of Nanosheet Transistors
DO  - 10.1109/TED.2025.3559482
ER  -