TY  - GEN 
AU  - Márquez González, Carlos
AU  - Gity, Farzan
AU  - Galdón Gil, José Carlos
AU  - Martinez Garcia, Alberto
AU  - Salazar, Norberto
AU  - Ansari, Lida
AU  - Hazel, Neil
AU  - Donetti, Luca
AU  - Lorenzo Lazaro, Francisco
AU  - Caño-García, Manuel
AU  - Ortega López, Rubén
AU  - Navarro Moral, Carlos
AU  - Sampedro Matarín, Carlos
AU  - Hurley, Paul
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2025
UR  - https://hdl.handle.net/10481/107467
AB  - In this work, a scalable technique is presented for the direct growth of tungsten disulfide (WS2) utilized in back-gated field-effect transistors (FETs), demonstrating robust and persistent p-type behavior across diverse conditions. Notably, this...
LA  - eng
TI  - On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices
DO  - 10.1002/aelm.202500079
ER  -