TY  - GEN 
AU  - Medina Bailón, Cristina
AU  - Padilla De la Torre, José Luis
AU  - Donetti, Luca
AU  - Navarro Moral, Carlos
AU  - Sampedro Matarín, Carlos
AU  - Gámiz Pérez, Francisco Jesús
PY  - 2025
UR  - https://hdl.handle.net/10481/106723
AB  - Given the critical role that quantum tunneling effects play in the behavior of nanoelectronic devices, it is
essential to investigate the influence and restraints of these phenomena on the overall transistor performance.
In this work, a previously...
LA  - eng
PB  - Elsevier
KW  - Geometrical variability
KW  - Gate leakage mechanism
KW  - Direct oxide tunneling
KW  - Trap assisted tunneling
KW  - Leakage current
KW  - MS-EMC
KW  - FinFET
TI  - Geometrical variability impact on the gate tunneling leakage mechanisms in FinFETs
DO  - 10.1016/j.sse.2025.109212
ER  -