TY  - GEN 
AU  - Singh, Aishwarya
AU  - Ganeriwala, Mohit D.
AU  - Joglekar, Radhika
AU  - Mohapatra, Nihar R.
PY  - 2025
UR  - https://hdl.handle.net/10481/105985
AB  - This study introduces a physics-based, SPICE-compatible model for Nanosheet Field-Effect Transistors (NsFETs) that offers explicit expressions for the drain current, terminal charges, and intrinsic capacitances applicable to both p-type and n-type...
LA  - eng
PB  - IEEE
KW  - Terminal charges
KW  - Nanosheet FET
KW  - Ward-Dutton
KW  - Quantum confinement
KW  - Bottom-up scalable compact model
TI  - A Scalable Physics-Based Compact Model for Terminal Charge, Intrinsic Capacitance and Drain Current in Nanosheet Field Effect Transistors
DO  - 10.1109/JEDS.2025.3540094
ER  -