TY  - GEN 
AU  - Ganeriwala, Mohit
AU  - Singh, Aishwarya
AU  - Dubey, Abhilash
AU  - Kaur, Ramandeep
AU  - Mohapatra, Nihar
PY  - 2021
UR  - https://hdl.handle.net/10481/103403
AB  - In this work, a physics-based compact model for channel charges and drain current in nanosheet FETs is presented. The model follows the bottom-up approach. The channel charges are calculated using the 1-D density of states (DOS), which seamlessly...
LA  - eng
KW  - Bottom-upapproach
KW  - compactmodel
KW  - constant charge
KW  - density approximation (CCDA)
KW  - density of states (DOS)
KW  - gate-all-around (GAA)
KW  - FET
KW  - nanosheet FETs (NsFETs)
KW  - nanowires
KW  - quantum mechanical confinement
TI  - A Bottom-Up Scalable Compact Model for Quantum Confined Nanosheet FETs
DO  - 10.1109/TED.2021.3130015
ER  -