TY  - GEN 
AU  - Ganeriwala, Mohit
AU  - Yadav, Chandan
AU  - García Ruiz, Francisco Javier
AU  - González Marín, Enrique
AU  - Yogesh, Singh Chauhan
AU  - Mohapatra, Nihar
PY  - 2017
UR  - https://hdl.handle.net/10481/103400
AB  - In this paper, a physics-basedcompactmodel for calculating the semiconductor charges and gate capacitance of III–V nanowire (NW) MOS transistors is presented. The model calculates the subband energies and the semiconductor charges by considering the...
LA  - eng
KW  - Circuit simulation
KW  - density of states (DOS)
KW  - III–V
KW  - MOS transistor
KW  - nanowire (NW)
KW  - quantum capacitance
TI  - Modeling of Quantum Confinement and Capacitance in III–V Gate-All-Around 1-D Transistors
DO  - 10.1109/TED.2017.2766693
ER  -