TY  - GEN 
AU  - Ganeriwala, Mohit
AU  - García Ruiz, Francisco Javier
AU  - González Marín, Enrique
AU  - Mohapatra, Nihar
PY  - 2021
UR  - https://hdl.handle.net/10481/103399
AB  - In this work, a physics-based unifed compact model for III-V GAA FET electrostatics is proposed. The model considers arbitrary cross sectional geometry of GAA FETs viz. rectangular, circular and elliptical. A comprehensive model for cuboid GAA FETs is...
LA  - spa
KW  - Gate all around FET
KW  - Nanowire
KW  - III–V
KW  - Compact model
KW  - Charge
KW  - Surface potential
KW  - Capacitance
KW  - Circuit simulation
TI  - A unifed compact model for electrostatics of III–V GAA transistors with diferent geometries
DO  - https://doi.org/10.1007/s10825-021-01751-2
ER  -