TY  - GEN 
AU  - Mohapatra, Nihar
AU  - Ganeriwala, Mohit
AU  - García Ruiz, Francisco Javier
AU  - González Marín, Enrique
PY  - 2019
UR  - https://hdl.handle.net/10481/103398
AB  - The III–V materials have a highly non-parabolic band structure that signifcantly afects the MOS transistor electrostatics. The compact models used to simulate circuits involving III–V MOS transistors must account for this band structure...
LA  - spa
KW  - Non-parabolic bandstructure
KW  - Nanowire
KW  - III–V
KW  - Compact model
KW  - Charge
KW  - Surface potential
KW  - Capacitance
TI  - A compact model for III–V nanowire electrostatics including band non‑parabolicity
DO  - https://doi.org/10.1007/s10825-019-01389-1
ER  -