TY  - GEN 
AU  - Behrle, Raphael
AU  - Pacheco-Sanchez, Anibal
AU  - Barth, Sven
AU  - Weber, Walter M.
AU  - Sistani, Masiar
PY  - 2025
UR  - https://hdl.handle.net/10481/103135
AB  - Schottky barrier field-effect transistors (SBFETs) are a promising family of devices suitable for realizing “Beyond CMOS” paradigms. As the SBFET device operation is strongly dependent on the metal–semiconductor junction properties, it is important to...
LA  - eng
PB  - Royal Society of Chemistry
TI  - Thermionic injection analysis in germanium nanowire Schottky junction FETs by means of 1D and 3D extraction methods
DO  - 10.1039/d4na00957f
ER  -