TY  - GEN 
AU  - Padilla De la Torre, José Luis
AU  - Alper, C
AU  - Medina Bailón, Cristina
AU  - Gámiz Pérez, Francisco Jesús
AU  - Ionescu, Adrian Mihai
PY  - 2015
UR  - https://hdl.handle.net/10481/100711
AB  - We investigate the effect of pseudo-bilayer configurations at low operating voltages (≤0.5 V) in the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) compared to the traditional bilayer structures of EHBTFETs...
LA  - eng
PB  - AIP Publishing
TI  - Assessment of Pseudo–Bilayer Structures in the Heterogate Germanium Electron–Hole Bilayer Tunnel Field–Effect Transistor
DO  - 10.1063/1.4923467
ER  -