TY  - GEN 
AU  - Padilla De la Torre, José Luis
AU  - Medina Bailón, Cristina
AU  - Márquez González, Carlos
AU  - Sampedro Matarín, Carlos
AU  - Donetti, Luca
AU  - Gámiz Pérez, Francisco Jesús
AU  - Ionescu, Adrian Mihai
PY  - 2018
UR  - https://hdl.handle.net/10481/100710
AB  - Among the different types of bilayer tunneling field-effect transistors exploiting interband tunneling phenomena with tunneling directions aligned with gate-induced electric fields, the utilization of InAs/GaSb channels proves to be an appealing means...
LA  - eng
PB  - Institute of Electrical and Electronics Engineers (IEEE)
KW  - heterojunction electron–hole bilayer TFET
KW  - IIIV compounds
KW  - quantum confinement
KW  - band-to-band tunneling
KW  - gate leakage tunneling
KW  - steep slope transistors
TI  - Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron–Hole Bilayer Tunneling Field–Effect Transistor
DO  - 10.1109/TED.2018.2866123
ER  -